********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Oct 13, 2014
*ECN S14-1861, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si2371EDS D G S
x1  D G S Si2371EDS_mos
x2  G S   Si2371EDS_esd
.ENDS Si2371EDS
.SUBCKT Si2371EDS_mos D G S 
M1 3 GX S S PMOS W= 1300000u L= 0.3u 
M2 S GX S D NMOS W= 1300000u L= 0.383u
R1 D 3 3.1737e-02 4.053e-03 6.189e-06 
CGS GX S 4.464e-10 
CGD GX D 2.457e-11 
RG G GY 11 
RTCV 100 S 1e6 1.005e-04 6.382e-07 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 1300000u 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 
+ RS = 0 KP = 4.383e-06 NSUB = 9.29e+15 
+ KAPPA = 1.000e-02 NFS = 1.169e+12 
+ LD = 0 IS = 0 TPG = -1 CAPOP = 12 ) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 
+NSUB = 1.831e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 5e-8 TREF = 25 BV = 31 
+RS = 8.663e-03 N = 2.111e+00 IS = 1.000e-06 
+EG = 1.019e+00 XTI = 2.208e+00 TRS = 3.323e-04 
+CJO = 4.384e-11 VJ = 4.797e-01 M = 5.653e-01 )  )  
.ENDS Si2371EDS_mos
.subckt Si2371EDS_esd 1 2 
r1 1 9 1.718e+05 -1.181e-04 
d1 2 9 dleak 
.MODEL dleak d (IS = 2.675e-09 XTI = 9.300e+02 EG = 1.17 
+ TREF = 25 TCV = 0 N = 8.5915e+01 BV = 50) 
r2 1 10 1.036e+03 3.000e-04
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 1.000e-9 XTI = -4.00e+02 EG = 1.17 
+ TREF = 25 TCV = 3.517e-03 N = 5.9515e+00 BV = 1.412e+01 
+ TLEV = 1)  
.ends Si2371EDS_esd 